Nano-scratch resistance study of nitrogenated amorphous carbon films prepared by unbalanced magnetron sputtering

被引:6
作者
Shi, J. R. [1 ]
Piramanayagam, S. N. [1 ]
机构
[1] Data Storage Inst, Singapore 117608, Singapore
关键词
Atomic force microscopy nano-scratch; Raman scattering; Nitrogenated amorphous carbon (a-CNx); Unbalanced magnetron sputtering;
D O I
10.1016/j.jmmm.2006.01.241
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nitrogenated amorphous carbon (a-CNx) films prepared by unbalanced magnetron sputtering (UBMS) have been investigated and compared with those prepared by conventional magnetron sputtering (CMS). The nitrogen-to-carbon ratio in deposited films increases from 0 to 0.22 as the N-2/Ar gas flow ratio varies from 0 to 8/17. Raman spectroscopy and atomic force microscopy nano-scratch resistance test were used to characterize the a-CNx films. As N content in the film increases, the G peak width decreases from 183 to 170 cm(-1), the I-D/I-G intensity ratio increases from 2.2 to 2.9. The a-CNx films prepared by UBMS show a much lower scratching depth than those prepared by CMS. The pure carbon prepared by UBMS shows the lowest scratching depth, which can be interpreted by the high sp(3) fraction of carbon atoms in the film. (C) 2006 Elsevier B. V. All rights reserved.
引用
收藏
页码:E115 / E119
页数:5
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