Room Temperature Ferromagnetism in Ga1-xHoxN (x=0.0 and 0.05) Diluted Magnetic Semiconductor Thin Films

被引：1
作者：
Rai, Ghulam Murtaza [1 ]
Iqbal, Muhammad Azhar [1 ]
Xu, Yong-bing [2 ]
Will, Iain Gordon [2 ]
Mahmood, Qasim [1 ]
机构：
[1] Univ Punjab, Dept Phys, Lahore 54590, Pakistan
[2] Univ York, Dept Elect, Spintron Lab, York YO10 5DD, N Yorkshire, England
来源：
CHINESE JOURNAL OF CHEMICAL PHYSICS | 2012年 / 25卷 / 03期
关键词：
Diluted magnetic semiconductor; Holmium doping; X-ray diffraction; Scanning electron microscopy; Room temperature ferromagnetism; MOLECULAR-BEAM-EPITAXY; GAN; IMPLANTATION; NANORODS; ERBIUM;
D O I：
10.1088/1674-0068/25/03/313-317
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
Holmium doped GaN diluted magnetic semiconductor thin films have been prepared by thermal evaporation technique and subsequent ammonia annealing. X-ray diffraction measurements reveal all peaks belong to the purely hexagonal wurtzite structure. Surface morphology and composition analysis were carried out by scanning electron microscopy and energy dispersive spectroscopy respectively. The room temperature ferromagnetic properties of Ga1-xHoxN (x=0.0, 0.05) films were analyzed using vibrating sample magnetometer at room temperature. Magnetic measurements showed that the undoped films (i.e. GaN) exhibited diamagnetic behavior, while the Ho-doped (Ga0.95Ho0.05N) film exhibited a ferromagnetic behavior.
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页码：313 / 317
页数：5
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