32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches

被引：50

作者：

Rodbell, Kenneth P. ^{[1
]}

Heidel, David F. ^{[1
]}

Pellish, Jonathan A. ^{[2
]}

Marshall, Paul W. ^{[3
]}

Tang, Henry H. K. ^{[1
]}

Murray, Conal E. ^{[1
]}

LaBel, Kenneth A. ^{[2
]}

Gordon, Michael S. ^{[1
]}

Stawiasz, Kevin G. ^{[1
]}

Schwank, James R. ^{[4
]}

Berg, Melanie D. ^{[5
]}

Kim, Hak S. ^{[5
]}

Friendlich, Mark. R. ^{[5
]}

Phan, Anthony M. ^{[5
]}

Seidleck, Christina M. ^{[5
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[3] NASA, Brookneal, VA 24528 USA

[4] Sandia Natl Labs, Albuquerque, NM 87175 USA

[5] MEI Technol, Seabrook, MD 20706 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期

关键词：

32 nm and 45 nm SOI hardened latches; angle dependent cross-section distributions; heavy ion modeling; sensitive node separation; silicon-on-insulator technology (SOI); single event upset (SEU); single event effects (SEE); track structures; SINGLE-EVENT-UPSETS; ION TRACKS; HEAVY-ION; SILICON; ENERGY; ELECTRON;

D O I：

10.1109/TNS.2011.2171715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single event upset (SEU) experimental heavy ion data and modeling results for CMOS, silicon-on-insulator (SOI), 32 nm and 45 nm stacked and DICE latches are presented. Novel data analysis is shown to be important for hardness assurance where Monte Carlo modeling with a realistic heavy ion track structure, along with a new visualization aid (the Angular Dependent Cross-section Distribution, ADCD), allows one to quickly assess the improvements, or limitations, of a particular latch design. It was found to be an effective technique for making SEU predictions for alternative 32 nm SOI latch layouts.

引用

页码：2702 / 2710

页数：9

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