Characterization of the induced plastic zone in a single crystal TiN(001) film by nanoindentation and transmission electron microscopy

被引:50
作者
Oden, M [1 ]
Ljungcrantz, M [1 ]
Hultman, L [1 ]
机构
[1] LINKOPING UNIV,DEPT PHYS,THIN FILM PHYS DIV,S-58183 LINKOPING,SWEDEN
关键词
D O I
10.1557/JMR.1997.0286
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The slip system of TiN at room temperature has been determined to be {110}[1(1) over bar0$] by Burgers vector analysis using transmission electron microscopy and slip trace analysis of indents made on a TiN(001) film deposited on a MgO(001) substrate. Both small indents (0.4 mN maximum load) and large indents (40 mN maximum load) were used to study the dislocation structure in TiN. The nucleation of dislocations was investigated using small indents. Further development of the plastic zone was studied using large indents and microhardness indents (1.6 N). The critical resolved shear stress evaluated at the load when pop-in occurs was estimated to be 3.7 GPa, assuming a Hertzian elastic contact. indents made with a 0.4 mN maximum load show a complex dislocation pattern with loops and straight segments that belong to the same slip system, Dislocations of mixed screw and edge type are dominant, The cascade of dislocations generated during pop-in is likely to nucleate from loops. For larger indents, the plastic zone extends more than three times the diameter of the imprint. The straight dislocations outside the large imprint are arranged in arrays along the [100] and [110] directions. A scanning force microscopy study of the surface outside a microhardness indent revealed a raised surface along [110] and formation of troughs along [100].
引用
收藏
页码:2134 / 2142
页数:9
相关论文
共 26 条
  • [1] LATTICE MISORIENTATION AND DISPLACED VOLUME FOR MICROHARDNESS INDENTATIONS IN MGO CRYSTALS
    ARMSTRONG, RW
    WU, CC
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1978, 61 (3-4) : 102 - 106
  • [2] BAKER SP, 1993, MATER RES SOC SYMP P, V308, P209, DOI 10.1557/PROC-308-209
  • [3] COCKAYNE DJ, 1972, Z NATURFORSCH PT A, VA 27, P452
  • [4] A method for interpreting the data from depth-sensing indentation instruments
    Doerner, M. F.
    Nix, W. D.
    [J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (04) : 601 - 609
  • [5] MICRO-SCRIBES IN SEMIINSULATING GAAS STUDIED BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY
    ERICSON, F
    HJORT, K
    SCHWEITZ, JA
    ANDERSSON, S
    JANZEN, E
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 143 (1-2) : 22 - 28
  • [6] FARBER BY, 1993, Z METALLKD, V84, P426
  • [7] MICROPLASTICITY DURING HIGH-TEMPERATURE INDENTATION AND THE PEIERLS POTENTIAL IN SAPPHIRE (ALPHA-AL2O3) SINGLE-CRYSTALS
    FARBER, BY
    YOON, SY
    LAGERLOF, KPD
    HEUER, AH
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 137 (02): : 485 - 498
  • [8] Hull D., 1984, INTRO DISLOCATIONS, V3rd, DOI DOI 10.1016/B978-0-08-096672-4.00006-2
  • [9] CHARACTERIZATION OF MISFIT DISLOCATIONS IN EPITAXIAL (001)-ORIENTED TIN, NBN, VN, AND (TI,NB)N FILM HETEROSTRUCTURES BY TRANSMISSION ELECTRON-MICROSCOPY
    HULTMAN, L
    SHINN, M
    MIRKARIMI, PB
    BARNETT, SA
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) : 309 - 317
  • [10] GROWTH OF EPITAXIAL TIN FILMS DEPOSITED ON MGO(100) BY REACTIVE MAGNETRON SPUTTERING - THE ROLE OF LOW-ENERGY ION IRRADIATION DURING DEPOSITION
    HULTMAN, L
    BARNETT, SA
    SUNDGREN, JE
    GREENE, JE
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 92 (3-4) : 639 - 656