Modeling the current of a double-gate MOSFET with very thin active region taking into account mobility dependence on the transverse electric field

被引：0

作者：

Lukasiak, Lidia ^{[1
]}

Majkusiak, Bogdan ^{[1
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

来源：

ELECTRON TECHNOLOGY CONFERENCE 2013 | 2013年 / 8902卷

关键词：

compact modeling; DGMOSFET; I-V characteristics; mobility degradation;

D O I：

10.1117/12.2031070

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Drain current and transconductance of a symmetrical, undoped double-gate MOSFET is modeled for the first time with mobility depending on both the applied voltage and position in the channel leading to analytical formulae. The obtained models are compared with simplified formulae assuming position-independent effective mobility. Good agreement is obtained in the case of one of the selected mobility models.

引用

页数：7

共 9 条

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