In situ growth of isotopically enriched 28Si nanowires using the floating-zone (FZ) melting method

Isotopically enriched Si-28 nanowires have been synthesized using a simple and noncontaminating floating-zone (FZ) method. The growth of the nanowires was performed in the top area, 1.5-2 cm from the floating melting zone (2 mm width) of a raw material bar under a flow of Ar gas. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses revealed that the nanowires of isotopically enriched Si-28 crystalline had diameters ranging from 20-50 nm. The special shape of the tip of the isotopically enriched Si-28 nanowires was observed to reveal the isotopic effect on the growth of nanowires.