Liquid-Film Assisted Mechanism of Reactive Flash Sintering in Oxide Systems

被引:15
作者
Chaim, Rachman [1 ]
Amouyal, Yaron [1 ]
机构
[1] Technion Israel Inst Technol, Dept Mat Sci & Engn, IL-32000 Haifa, Israel
关键词
reactive flash sintering; Joule heating; oxides; liquid films; phase diagrams; ELECTRIC-FIELD; GRAIN-GROWTH; ALUMINA; SOLUBILITY; MAGNESIA; MGO; MICROSTRUCTURE; DENSIFICATION; KINETICS; TITANIA;
D O I
10.3390/ma12091494
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Reactive flash sintering in oxide systems is analyzed assuming the formation of a liquid film at the particle contacts at the flash onset temperature. Formation of intermediate phases, as well as phase assemblage, are predicted upon optimal conditions of the electric field and current density. In single-phase impure oxides, the solidus and the solubility limit determine the flash onset temperature. In reacting binary systems, the composition of the liquidus determines primarily the reaction products during the cooling. In multicomponent systems, the oxide with the lowest flash temperature forms the interfacial liquid film, and the solid phase assemblage follows the equilibrium phase diagram. Examples from literature are consistent with reactive flash sintering and flash sintering assisted by a transient liquid film.
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页数:9
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