Modeling, simulation and design of the vertical Graphene Base Transistor

被引：25

作者：

Driussi, F. ^{[1
]}

Palestri, P. ^{[1
]}

Selmi, L. ^{[1
]}

机构：

[1] Univ Udine, DIEGM, I-33100 Udine, Italy

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 109卷

关键词：

Graphene; Modeling; Graphene Base Transistor; RF analog application; Device optimization;

D O I：

10.1016/j.mee.2013.03.134

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An efficient one-dimensional model to investigate the high frequency performance of Graphene Base Transistor (GBT) has been developed and used to provide guidelines for the design and optimization of THz operation devices. The simulation results show that cut-off frequencies in the THz range are feasible over a quite broad range of the model parameters, assessing the promising potential of the intrisic GBT device. The model indicates that, for an optimized GBT, the structure should exploit dielectric materials with not too large permittivity and small energy barriers with respect to the metal emitter. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：338 / 341

页数：4

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