Mechanical Exfoliation and Characterization of Single- and Few-Layer Nanosheets of WSe2, TaS2, and TaSe2

被引:566
作者
Li, Hai [1 ]
Lu, Gang [1 ]
Wang, Yanlong [2 ]
Yin, Zongyou [1 ]
Cong, Chunxiao [2 ]
He, Qiyuan [1 ]
Wang, Lu [3 ]
Ding, Feng [3 ]
Yu, Ting [2 ]
Zhang, Hua [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[3] Hong Kong Polytech Univ, Inst Text & Clothing, Kowloon, Hong Kong, Peoples R China
基金
新加坡国家研究基金会;
关键词
RAMAN-SCATTERING; TUNGSTEN DISELENIDE; MOS2; WO3; GRAPHENE; NANOWIRES; FILMS; PASSIVATION; FABRICATION; EFFICIENCY;
D O I
10.1002/smll.201202919
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Single- and few-layer transition-metal dichalcogenide nanosheets, such as WSe2, TaS2, and TaSe2, are prepared by mechanical exfoliation. A Raman microscope is employed to characterize the single-layer (1L) to quinary-layer (5L) WSe2 nanosheets and WSe2 single crystals with a laser excitation power ranging from 20 W to 5.1 mW. Typical first-order together with some second-order and combinational Raman modes are observed. A new peak at around 308 cm-1 is observed in WSe2 except for the 1L WSe2, which might arise from interlayer interactions. Red shifting of the A1g mode and the Raman peak around 308 cm-1 is observed from 1L to 5L WSe2. Interestingly, hexagonal- and monoclinic-structured WO3 thin films are obtained during the local oxidation of thinner (1L-3L) and thicker (4L and 5L) WSe2 nanosheets, while laser-burned holes are found during the local oxidation of the WSe2 single crystal. In addition, the characterization of TaS2 and TaSe2 thin layers is also conducted.
引用
收藏
页码:1974 / 1981
页数:8
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