Properties of TiO2 thin films on InP substrate prepared by metalorganic chemical vapor deposition

被引：12

作者：

Lee, MK ^{[1
]}

Hung, YM ^{[1
]}

Huang, JJ ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 11期

关键词：

MOCVD; TiO2; Ti(i-OC3H7)(4); O-2; InP;

D O I：

10.1143/JJAP.40.6543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deposition of TiO2 thin films on in InP substrate is studied by metalorganic chemical vapor deposition (MOCVD) in the temperature range of 300-550 degreesC with Ti(i-OC3H7)(4) and O-2 as the starting materials. The morphology of the TiO2 films is mirror like. The structure, growthrate and grain size of the TiO2 films depend on the deposition temperature, The film stoichometry was measured by energy dispersive X-ray (EDX) spectroscopy. The refractive index of the TiO2 films as measured by ellipsometry reached 2.6 at the growth temperature of 350 degreesC. Based on current-voltage measurement of the Al/TiO2/InP structure, the leakagecurrent is 1 x 10(-5) A/cm(2) under the electric field of 0.06 MV/cm at the growth temperature of 500 degreesC.

引用

页码：6543 / 6546

页数：4

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