Design of a new CMOS low noise amplifier for ultra wide-band wireless receiver in 0.18um technology

被引：2
作者：
Ghosh, PP [1 ]
Xiao, E [1 ]
机构：
[1] Univ Texas, Dept Elect Engn, Arlington, TX 76010 USA
来源：
2005 IEEE INTERNATIONAL CONFERENCE ON ULTRA-WIDEBAND (ICU) | 2005年
关键词：
CMOS amplifiers; cascode; low noise amplifiers; ultra wide-band; UWB;
D O I：
10.1109/ICU.2005.1570041
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses the design of a new single ended low noise amplifier (LNA), in the 0.18 mu m CMOS process, for the ultra wide-band (UWB) of 3.1 GHz to 5.15 GHz. Improved noise figure and excellent input impedance match are achieved using the design. From a power supply of 1.8V the LNA exhibits a noise figure (NF) of 2.29 dB to 2.48 dB, input reflection coefficient (S11) of less than -14.9 dB and a small signal power gain (S21) of 11.20 dB to 12.10 dB over the whole range. The equation for noise factor is derived for the UWB LNA.
引用
收藏
页码：514 / 519
页数：6
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