High Q-Factor Millimeter-Wave Silicon Resonators

被引：12

作者：

Krupka, Jerzy ^{[1
]}

Kaminski, Pawel ^{[2
]}

Jensen, Leif ^{[3
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[3] Topsil Semicond Mat AS, DK-3600 Frederikssund, Denmark

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2016年 / 64卷 / 12期

关键词：

Complex permittivity; dielectric resonator; resistivity; semi-insulating silicon; whispering gallery modes (WGMs); FAR-INFRARED ABSORPTION; SPECTROSCOPY; RESISTIVITY;

D O I：

10.1109/TMTT.2016.2607712

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resonators made of high-resistivity silicon (HRS) have been manufactured, and their characteristics were measured at a frequency range from 20 to 50 GHz. To study the influence of the material resistivity on Q-factor values, two HRSs were used. The first one was as-grown high-purity floating zone (FZ) silicon with a resistivity of similar to 70 k Omega . cm. The second was FZ silicon irradiated with high-energy protons. The resistivity of the irradiated silicon was essentially the same as that of intrinsic silicon with a resistivity of similar to 400 k Omega . cm at room temperature. Several whispering gallery modes were identified and measured on disk shape samples made on both materials. At room temperature and at a frequency of 50 GHz, the Q-factor values for the resonators made of the as-grown and the irradiated silicon are up to 1.8 x 10(4) and up to 6 x 10(4), respectively.

引用

页码：4149 / 4154

页数：6

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