Effect of Bi incorporation and temperature on the properties of sprayed CuInS2 thin films

被引：21

作者：

Mahendran, C. ^{[1
]}

Suriyanarayanan, N. ^{[2
]}

机构：

[1] Sri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Dept Phys, Coimbatore 641020, Tamil Nadu, India

[2] Govt Coll Technol, Dept Phys, Coimbatore 641013, Tamil Nadu, India

来源：

PHYSICA B-CONDENSED MATTER | 2013年 / 408卷

关键词：

X-ray diffraction; Optical property; Electrical conductivity; Photo luminescence; Surface morphology; Spray pyrolysis; OPTICAL-PROPERTIES; SOLAR-CELLS; CHALCOPYRITE SEMICONDUCTORS; PYROLYSIS; EVAPORATION; EFFICIENCY;

D O I：

10.1016/j.physb.2012.08.045

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

CuInS2 is a good absorber for solar cell and photovoltaic devices. In this work, Bi-doped (0.1 M) CuInS2 thin films are deposited in the temperature range of 300-400 degrees C. Bi doping and temperature affect the growth of polycrystalline CuInS2 thin films. EDAX confirms the presence of Bi, Cu, In and S in the films. Optical studies show that the Bi doped crystals grown in the temperature of 300 degrees C can be used as an efficient absorber for solar cell and photovoltaic applications. About 80% light transmission is observed in the temperature range of 325-400 degrees C. The band gap energy increases from 1.53 to 2.0 eV as the temperature increases from 300 to 400 degrees C. SEM photographs depict accelerated growth of crystals due to the formation of some mediate products in the molten phase. The intensity of PL emission is suppressed by the oxygen content in the films. Electrical studies show the semiconducting nature of thin films. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：62 / 67

页数：6

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