Bismuth oxide nanorods based immunosensor for mycotoxin detection

被引:37
作者
Solanki, Pratima R. [1 ,2 ]
Singh, Jay [1 ,3 ]
Rupavali, Bharti [1 ]
Tiwari, Sachchidanand [2 ]
Malhotra, Bansi D. [1 ,4 ]
机构
[1] Natl Phys Lab, CSIR, DST Ctr Biomol Elect, KS Krishnan Marg, New Delhi, India
[2] Jawaharlal Nehru Univ, Special Ctr Nano Sci, New Delhi 110067, India
[3] Delhi Technol Univ, Dept Appl Chem & Polymer Technol, Main Bawana Rd, Delhi 110042, India
[4] Delhi Technol Univ, Dept Biotechnol, Main Bawana Rd, Delhi 110042, India
来源
MATERIALS SCIENCE AND ENGINEERING C-MATERIALS FOR BIOLOGICAL APPLICATIONS | 2017年 / 70卷
关键词
Bismuth oxide nanorods (nBi(2)O(3)); Aflatoxin B1; Immunosensor; Electrochemical studies; AFLATOXIN B-1; NANOPARTICLES; BIOSENSORS; BI2O3;
D O I
10.1016/j.msec.2016.09.027
中图分类号
TB3 [工程材料学]; R318.08 [生物材料学];
学科分类号
0805 ; 080501 ; 080502 ;
摘要
We report results of the studies relating to fabrication of an efficient immunosensor based on bismuth oxide nanorods (nBi(2)O(3)), electrophoretically deposited onto indium-tin-oxide (ITO) coated glass substrate. This immunosensor was fabricated by immobilization of anti-aflatoxin monoclonal antibodies (Ab-AFB1) and bovine serum albumin (BSA) for aflatoxin B1 detection. The structural and morphological studies of n-Bi2O3 have been carried out by XRD, UV-vis spectrophotometer; SEM, AFM and FITR It was found that the nBi(2)O(3) provided improved sensing characteristics to the electrode interface in terms of electroactive surface area, diffusion coefficient, charge transfer rate constant and electron transfer kinetics. The results of electrochemical response studies of this BSA/Ab-AFB1/nBi(2)O(3)/ITO immunosensor revealed good linearity in the range of 1-70 ng dL(-1) with low detection limit of 8.715 ng/dL, improved sensitivity of 1.132 mu A/(ng/dL cm(-2)), regression coefficient R-2 of 0.918 and reproducibility of >11 times. The association constant for the BSA/Ab-AFB1/nBi(2)O(3)/ITO immunosensor was determined as 7.318 ng/dL. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:564 / 571
页数:8
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