共 50 条
Effect of Pressure on the Electrical Resistance of Individual Boron-Doped Carbon Nanotubes
被引:0
|作者:
Watanabe, Tohru
[1
]
Tomioka, Fumiaki
[1
]
Ishii, Satoshi
[1
]
Tsuda, Shunsuke
[1
]
Yamaguchi, Takahide
[1
]
Takano, Yoshihiko
[1
]
机构:
[1] Natl Inst Mat & Sci, Tsukuba, Ibaraki 3050047, Japan
关键词:
SUPERCONDUCTIVITY;
FILMS;
D O I:
10.1143/JJAP.51.105103
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The electrical resistance of an individual boron-doped multi-walled carbon nanotube was measured under high pressure up to 1.73 GPa. The resistance decreased drastically when pressure was applied. The temperature dependence of the resistance was explained by a variable range hopping transport model, and the dimensionality was observed to change from one to three dimensions with increasing pressure. (C) 2012 The Japan Society of Applied Physics
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