Effect of Pressure on the Electrical Resistance of Individual Boron-Doped Carbon Nanotubes

被引：0

作者：

Watanabe, Tohru ^{[1
]}

Tomioka, Fumiaki ^{[1
]}

Ishii, Satoshi ^{[1
]}

Tsuda, Shunsuke ^{[1
]}

Yamaguchi, Takahide ^{[1
]}

Takano, Yoshihiko ^{[1
]}

机构：

[1] Natl Inst Mat & Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 10期

关键词：

SUPERCONDUCTIVITY; FILMS;

D O I：

10.1143/JJAP.51.105103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical resistance of an individual boron-doped multi-walled carbon nanotube was measured under high pressure up to 1.73 GPa. The resistance decreased drastically when pressure was applied. The temperature dependence of the resistance was explained by a variable range hopping transport model, and the dimensionality was observed to change from one to three dimensions with increasing pressure. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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