Extremely stable temperature characteristics of 1550-nm band, p-doped, highly stacked quantum-dot laser diodes

被引：24

作者：

Matsumoto, Atsushi ^{[1
]}

Akahane, Kouichi ^{[1
]}

Umezawa, Toshimasa ^{[1
]}

Yamamoto, Naokatsu ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol NICT, Koganei, Tokyo 1848795, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 04期

关键词：

SEMICONDUCTOR OPTICAL AMPLIFIERS; QD-SOA; MODULATION;

D O I：

10.7567/JJAP.56.04CH07

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated 1.55-mu m band, broad-area, p-doped, 30-layer stacked quantum-dot (QD) laser diodes (LDs) grown on an InP(311)B substrate via a delta-doping method employing a strain compensation technique. We doped Be atoms to a depth of 5 nm from the bottom of each QD layer. The concentration of Be atoms doped in the InGaAlAs spacer layer was 1 x 10-(18) cm(-3). We observed a strong photoluminescence emission and a relatively coherent surface of QDs using atomic force microscopy. In addition, we observed that the fabricated QD-LDs had extremely stable temperature characteristics, and a characteristic temperature T-0 of more than 2156K was obtained. (C) 2017 The Japan Society of Applied Physics

引用

页数：5

共 33 条

[1]

Akahane K., 2016, P ISLC, pWE46

[2] High Characteristic Temperature of Highly Stacked Quantum-Dot Laser for 1.55-μm Band [J].

Akahane, Kouichi ;

Yamamoto, Naokatsu ;

Kawanishi, Tetsuya .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (02) :103-105

[3] Highly stacked quantum-dot laser fabricated using a strain compensation technique [J].

Akahane, Kouichi ;

Yamamoto, Naokatsu ;

Tsuchiya, Masahiro .

APPLIED PHYSICS LETTERS, 2008, 93 (04)

[4] Systematic study of the. effects of modulation p-doping on 1.3-μm quantum-dot lasers [J].

Alexander, Ryan R. ;

Childs, David T. D. ;

Agarwal, Harsh ;

Groom, Kristian M. ;

Liu, Hui-Yun ;

Hopkinson, Mark ;

Hogg, Richard A. ;

Ishida, Mitsuru ;

Yamamoto, Tsuyoshi ;

Sugawara, Mitsuru ;

Arakawa, Yasuhiko ;

Badcock, Tom J. ;

Royce, Richard J. ;

Mowbray, David J. .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (11-12) :1129-1139

[5] Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substrates [J].

Alghoraibi, I. ;

Rohel, T. ;

Piron, R. ;

Bertru, N. ;

Paranthoen, C. ;

Elias, G. ;

Nakkar, A. ;

Folliot, H. ;

Le Corre, A. ;

Loualiche, S. .

APPLIED PHYSICS LETTERS, 2007, 91 (26)

[6] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[7] Low threshold current density and negative characteristic temperature 1.3 μm InAs self-assembled quantum dot lasers [J].

Badcock, T. J. ;

Royce, R. J. ;

Mowbray, D. J. ;

Skolnick, M. S. ;

Liu, H. Y. ;

Hopkinson, M. ;

Groom, K. M. ;

Jiang, Q. .

APPLIED PHYSICS LETTERS, 2007, 90 (11)

[8]

Becker A., 2016, P ISLC, pTuC5

[9] High Performance InAs/In0.53Ga0.23Al0.24As/InP Quantum Dot 1.55 μm Tunnel Injection Laser [J].

Bhowmick, Sishir ;

Baten, Md Zunaid ;

Frost, Thomas ;

Ooi, Boon S. ;

Bhattacharya, Pallab .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2014, 50 (01) :7-14

[10] Three-region characteristic temperature in p-doped quantum dot lasers [J].

Cao, Yu-Lian ;

Ji, Hai-Ming ;

Yang, Tao ;

Zhang, Yan-Hua ;

Ma, Wen-Quan ;

Wang, Qi-Jie .

APPLIED PHYSICS LETTERS, 2014, 104 (04)

← 1 2 3 4 →