SiOx interlayer to enhance the performance of InGaZnO-TFT with AlOx gate insulator

被引：23

作者：

Li, Jun ^{[1
,2
]}

Zhou, Fan ^{[1
]}

Lin, Hua-Ping ^{[1
]}

Zhu, Wen-Qing ^{[1
,2
]}

Zhang, Jian-Hua ^{[2
]}

Jiang, Xue-Yin ^{[1
]}

Zhang, Zhi-Lin ^{[1
,2
]}

机构：

[1] Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China

[2] Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China

来源：

CURRENT APPLIED PHYSICS | 2012年 / 12卷 / 05期

关键词：

Thin film transistor; InGaZnO; SiOx interlayer; Bias stability; THIN-FILM TRANSISTORS;

D O I：

10.1016/j.cap.2012.03.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have fabricated indium-gallium-zinc (IGZO) thin film transistor (TFT) using SiOx interlayer modified aluminum oxide (AlOx) film as the gate insulator and investigated their electrical characteristics and bias voltage stress. Compared with IGZO-TFT with AlOx insulator, IGZO-TFT with AlOx/SiOx insulator shows superior performance and better bias stability. The saturation mobility increases from 5.6 cm(2)/V s to 7.8 cm(2)/V s, the threshold voltage downshifts from 9.5 V to 3.3 V, and the contact resistance reduces from 132 Omega cm to 91 Omega cm. The performance improvement is attributed to the following reasons: (1) the introduction of SiOx interlayer improves the insulator surface properties and leads to the high quality IGZO film and low trap density of IGZO/insulator interface. (2) The better interface between the channel and S/D electrodes is favorable to reduce the contact resistance of IGZO-TFT. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1288 / 1291

页数：4

共 18 条

[1] Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors [J].

Cho, Young-Je ;

Shin, Ji-Hoon ;

Bobade, S. M. ;

Kim, Young-Bae ;

Choi, Duck-Kyun .

THIN SOLID FILMS, 2009, 517 (14) :4115-4118

[2] Investigating the stability of zinc oxide thin film transistors [J].

Cross, R. B. M. ;

De Souza, M. M. .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[3] Correlation between bias stress instability and phototransistor operation of pentacene thin-film transistors [J].

Debucquoy, Maarten ;

Verlaak, Stijn ;

Steudel, Soeren ;

Myny, Kris ;

Genoe, Jan ;

Heremans, Paul .

APPLIED PHYSICS LETTERS, 2007, 91 (10)

[4] Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].

Jeong, Jae Kyeong ;

Yang, Hui Won ;

Jeong, Jong Han ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[5] Present status of amorphous In-Ga-Zn-O thin-film transistors [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo .

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2010, 11 (04)

[6] Improvement in the bias stability of zinc oxide thin-film transistors using Si3N4 insulator with SiO2 interlayer [J].

Kim, Woong-Sun ;

Moon, Yeon-Keon ;

Kim, Kyung-Taek ;

Shin, Sae-Young ;

Park, Jong-Wan .

THIN SOLID FILMS, 2011, 520 (01) :578-581

[7] Top-gate TFTs using 13.56 MHz PECVD microcrystalline silicon [J].

Lee, CH ;

Striakhilev, D ;

Tao, S ;

Nathan, A .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (09) :637-639

[8] Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors [J].

Lee, Jeong-Min ;

Cho, In-Tak ;

Lee, Jong-Ho ;

Kwon, Hyuck-In .

APPLIED PHYSICS LETTERS, 2008, 93 (09)

[9] BIAS-STRESS-INDUCED STRETCHED-EXPONENTIAL TIME-DEPENDENCE OF CHARGE INJECTION AND TRAPPING IN AMORPHOUS THIN-FILM TRANSISTORS [J].

LIBSCH, FR ;

KANICKI, J .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1286-1288

[10] High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates [J].

Lim, Wantae ;

Jang, Jung Hun ;

Kim, S. -H. ;

Norton, D. P. ;

Craciun, V. ;

Pearton, S. J. ;

Ren, F. ;

Shen, H. .

APPLIED PHYSICS LETTERS, 2008, 93 (08)

← 1 2 →