Morphology control of aluminum nitride (AlN) for a novel high-temperature hydrogen sensor

被引:15
作者
Hermawan, Angga [1 ]
Asakura, Yusuke [1 ]
Yin, Shu [1 ]
机构
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat IMRAM, Sendai, Miyagi 9808577, Japan
基金
日本学术振兴会;
关键词
aluminum nitride; controllable morphology; direct nitridation; gamma-AlOOH; hydrogen sensor; OXIDE GAS SENSORS; ELECTRICAL-CONDUCTIVITY; SINGLE-CRYSTAL; NANOSTRUCTURES; NANOROD; GROWTH; CARBON; FILMS;
D O I
10.1007/s12613-020-2143-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Hydrogen is a promising renewable energy source for fossil-free transportation and electrical energy generation. However, leaking hydrogen in high-temperature production processes can cause an explosion, which endangers production workers and surrounding areas. To detect leaks early, we used a sensor material based on a wide bandgap aluminum nitride (AlN) that can withstand a high-temperature environment. Three unique AlN morphologies (rod-like, nest-like, and hexagonal plate-like) were synthesized by a direct nitridation method at 1400 degrees C using gamma-AlOOH as a precursor. The gas-sensing performance shows that a hexagonal plate-like morphology exhibited p-type sensing behavior and showed good repeatability as well as the highest response (S= 58.7) toward a 750 ppm leak of H(2)gas at high temperature (500 degrees C) compared with the rod-like and nest-like morphologies. Furthermore, the hexagonal plate-like morphology showed fast response and recovery times of 40 and 82 s, respectively. The surface facet of the hexagonal morphology of AlN might be energetically favorable for gas adsorption-desorption for enhanced hydrogen detection.
引用
收藏
页码:1560 / 1567
页数:8
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