Superconductivity Study of GaN Highly Doped by Transition Metals

被引：0

作者：

Gosk, J. B. ^{[1
,2
]}

Bockowski, M. ^{[3
]}

Tokarczyk, M. ^{[1
]}

Kowalski, G. ^{[1
]}

Twardowski, A. ^{[1
]}

机构：

[1] Univ Warsaw, Inst Expt Phys, Fac Phys, PL-00681 Warsaw, Poland

[2] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland

[3] PAS, High Pressure Res Ctr UNIPRESS, PL-01142 Warsaw, Poland

来源：

ACTA PHYSICA POLONICA A | 2013年 / 124卷 / 05期

关键词：

SINGLE-CRYSTALS; GALLIUM NITRIDE; PHASE; HEAT; CR;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

GaN:Cr and GaN:Fe single crystals as well as GaN:Mn micropowders highly doped by transition metals were grown to investigate low temperature superconductivity. Magnetic measurements revealed type I superconductivity with T-C approximate to 6 K and H-C approximate to 600 Oe, identical for all compounds and also identical to that observed before in GaP:Cr and GaAs:Cr. The presence of amorphous inclusions of gallium may explain existing superconductivity as a result of a phase transition leading to beta-Ga during cooling down of the sample Since the observed parameters are close to those characteristic for superconducting Ga(II) this possibility could not be ruled out.

引用

页码：877 / 880

页数：4

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