Response modeling of single SnO2 nanowire gas sensors

被引:30
作者
Asadzadeh, Mohammad Zhian [1 ]
Kock, Anton [1 ]
Popov, Maxim [1 ]
Steinhauer, Stephan [1 ,2 ]
Spitaler, Juergen [1 ]
Romaner, Lorenz [1 ]
机构
[1] Mat Ctr Leoben Forsch GmbH MCL, Roseggerstr 12, A-8700 Leoben, Austria
[2] KTH Royal Inst Technol, Dept Appl Phys, SE-10691 Stockholm, Sweden
关键词
Poisson-Boltzmann; Sensor response; Nanowire gas sensor; Space charge region; Electrostatic potential; Donor concentration; POWER-LAW RESPONSE; TIN OXIDE; CONDUCTION MODEL; ELECTRONIC NOSE; MOBILE DONORS; GRAIN-SIZE; MECHANISMS; SURFACE; OXYGEN; SENSITIVITY;
D O I
10.1016/j.snb.2019.05.041
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The response of single SnO2 nanowire gas sensors with different diameters between 20 and 140 nm are evaluated by calculating the nanowire conductivity as a function of the surface charge density. The procedure involves the numerical solution of the Poisson-Boltzmann equation for the electrostatic potential in cylindrical geometry in order to model the depletion region and band bending at the SnO2 nanowire surface. In the model we take into account varying surface charge densities sigma and bulk electron concentrations n(0) to calculate the electrical conductivity. Considering the fact that the surface charge density depends on the nanowire surface interactions with ambient gas, the model allows us to simulate the sensor response when the nanowire is employed as gas sensing component. We report a saturation in depletion length lambda versus surface charge density s which is the principal reason for limiting the sensor responses. The results also show that the conductivity is decreasing by increasing surface charge density, the smaller the nanowire diameter the steeper the decrease. As a result the nanowire response is proportional to 1/d where d is the nanowire diameter. Furthermore, we argue about the validity of the modeling results and their relevance to experimental findings on SnO2 nanowire based gas sensors reported in literature.
引用
收藏
页码:22 / 29
页数:8
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