Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors

被引：6
作者：
Li, Huijie
Liu, Guipeng [1 ]
Wei, Hongyuan
Jiao, Chunmei
Wang, Jianxia
Zhang, Heng
Jin, Dong Dong
Feng, Yuxia
Yang, Shaoyan
Wang, Lianshan
Zhu, Qinsheng
Wang, Zhan-Guo
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 23期
基金：
美国国家科学基金会;
关键词：
EMISSION MICROSCOPY; TRANSPORT; CONTACTS;
D O I：
10.1063/1.4841715
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A scattering mechanism related to the Schottky barrier height (SBH) spatial fluctuation of the two dimensional electron gas (2DEG) in AlGaN/GaN heterostructures is presented. We find that the low field mobility is on the order of 10(4)-10(6) cm(2)/Vs. The 2DEG transport properties are found to be influenced by both the mobility and 2DEG density variations caused by the SBH fluctuation. Our results indicate that a uniform Schottky contact is highly desired to minimize the influence of SBH inhomogeneity on the device performance. (C) 2013 AIP Publishing LLC.
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页数：4
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