Tunable electronic and magnetic properties of monolayer MoS2 on decorated AlN nanosheets: a van der Waals density functional study

被引:24
作者
He, C. [1 ]
Zhang, W. X. [2 ]
Li, T. [2 ]
Zhao, L. [2 ]
Wang, X. G. [2 ]
机构
[1] Xi An Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
[2] Changan Univ, Sch Mat Sci & Engn, Xian 710064, Peoples R China
基金
中国国家自然科学基金;
关键词
COPPER NANOWIRES; GRAPHENE; ADSORPTION; HYDROGEN; HETEROSTRUCTURES; SILICENE; MOLECULE; MOBILITY; GAP;
D O I
10.1039/c5cp02855h
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, structural, electronic, and magnetic properties of monolayer MoS2 on decorated AlN nanosheets have been systematically investigated using density functional theory with van der Waals corrections. The results indicate that the surface microstructure of the AlN substrate and stacking patterns significantly affect the electronic and magnetic properties of heterostructures. Moreover, the n type semiconductor to p type semiconductor to metal transition accompanied with the nonmagnetic to magnetic transfer can be achieved for monolayer MoS2. The diverse electronic and magnetic properties highlight the potential of MoS2 nanosheets for applications in electronics and spintronics.
引用
收藏
页码:23207 / 23213
页数:7
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