Atom abstraction and gas phase dissociation in the interaction of XeF2 with Si(100)

被引:11
作者
Hefty, R. C. [1 ]
Holt, J. R. [1 ]
Tate, M. R. [1 ]
Ceyer, S. T. [1 ]
机构
[1] MIT, Dept Chem, Cambridge, MA 02139 USA
基金
美国国家科学基金会;
关键词
adsorption; chemisorption; dangling bonds; dissociation; elemental semiconductors; molecular beams; silicon; xenon compounds;
D O I
10.1063/1.3025901
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Xenon difluoride reacts with Si(100)2x1 by single atom abstraction whereby a dangling bond abstracts a F atom from XeF2, scattering the complementary XeF product molecule into the gas phase, as observed in a molecular beam surface scattering experiment. Partitioning of the available reaction energy produces sufficient rovibrational excitation in XeF for dissociation of most of the XeF to occur. The resulting F and Xe atoms are shown to arise from the dissociation of gas phase XeF by demonstrating that the angle-resolved velocity distributions of F, Xe, and XeF conserve momentum, energy, and mass. Dissociation occurs within 2 A of the surface and within a vibrational period of the excited XeF molecule. Approximately an equal amount of the incident XeF2 is observed to react by two atom abstraction, resulting in adsorption of a second F atom and scattering of a gas phase Xe atom. Two atom abstraction occurs for those XeF product molecules whose bond axes at the transition state are oriented within +/- 60 degrees of the normal and with the F end pointed toward the surface.
引用
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页数:14
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