Effect of buffer layer deposition on diameter and alignment of carbon nanotubes in water-assisted chemical vapor deposition

被引:2
作者
Patole, Shashikant P. [1 ,2 ]
Jeong, Jae-Hun [1 ]
Yu, Seong Man [2 ]
Kim, Ha-Jin [3 ]
Han, Jae-Hee [4 ]
Han, In-Taek [3 ]
Yoo, Ji-Beom [1 ,2 ]
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea
[3] SAIT, Mat Applicat Grp, Yongin 446712, South Korea
[4] Gachon Univ, Dept Energy IT, Songnam 461701, South Korea
基金
新加坡国家研究基金会;
关键词
Carbon nanotubes; Buffer layer; Catalyst; Surface topography; Growth mechanism; SUPER GROWTH;
D O I
10.1016/j.apsusc.2012.12.129
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Vertically aligned carbon nanotubes (CNTs) grown by water-assisted chemical vapor deposition have revealed differences in structure and morphology depending on the deposition rate of the Al buffer layer. Rearrangement of the Fe catalyst during CNT growth is mainly influenced by the buffer layer topography, which in turn depends on the buffer layer deposition rate. A higher deposition rate makes the substrate rougher and causes the growth of more aligned, low diameter CNTs with greater height. In contrast, slow deposition results in a smooth surface, which grows misaligned, large diameter CNTs with less height. Based on the results, a CNT growth model has been proposed. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:32 / 38
页数:7
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