Formula for average energy required to produce a secondary electron in an insulator

被引：6

作者：

Xie Ai-Gen ^{[1
]}

Zhan Yu ^{[1
]}

Gao Zhi-Yong ^{[1
]}

Wu Hong-Yan ^{[1
]}

机构：

[1] Nanjing Univ Informat Sci & Technol, Sch Phys & Optoelect Engn, Nanjing 210044, Jiangsu, Peoples R China

来源：

CHINESE PHYSICS B | 2013年 / 22卷 / 05期

基金：

中国国家自然科学基金;

关键词：

width of forbidden band; electron affinity; average energy; insulator; RADIATION DETECTORS; SILICON-CARBIDE; HOLE PAIR; EMISSION; YIELD; SURFACE; SIMULATION; DIAMOND; FILMS; SIO2;

D O I：

10.1088/1674-1056/22/5/057901

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on a simple classical model specifying that the primary electrons interact with the electrons of a lattice through the Coulomb force and a conclusion that the lattice scattering can be ignored, the formula for the average energy required to produce a secondary electron (epsilon) is obtained. On the basis of the energy band of an insulator and the formula for epsilon, the formula for the average energy required to produce a secondary electron in an insulator (epsilon(i)) is deduced as a function of the width of the forbidden band (E-g) and electron affinity chi. Experimental values and the epsilon(i) values calculated with the formula are compared, and the results validate the theory that explains the relationships among Eg, chi, and epsilon(i) and suggest that the formula for epsilon(i) is universal on the condition that the primary electrons at any energy hit the insulator.

引用

页数：3

共 42 条

[1] SECONDARY ELECTRON-ESCAPE PROBABILITIES [J].