Conductive Atomic Force Microscopy failure analysis for SOI devices

被引：0

作者：

Soon-Huat, Lim ^{[1
]}

Zheng Xinhua ^{[1
]}

Chea-Wei, Teo ^{[1
]}

Narang, Vinod ^{[1
]}

Hock, Teo Beng ^{[1
]}

Chin, J. M. ^{[1
]}

机构：

[1] AMD, Adv Micro Devices Pte Ltd, Singapore 469032, Singapore

来源：

IPFA 2008: PROCEEDINGS OF THE 15TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A FIB shorting technique to create a conducting path across the buried oxide to connect active silicon to silicon substrate is demonstrated to allow Conductive Atomic Force Microscopy (CAFM) failure analysis on SOI devices. CAFM is carried out at via and contact levels to provide current images that helped to localize the faulty node and also determine current-voltage characteristics at an area of interest.

引用

页码：96 / 99

页数：4

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