The role of oxygen and hydrogen in GaN

被引：9
作者：
Clerjaud, B
Côte, D
Naud, C
Bouanani-Rahbi, R
Wasik, D
Pakula, K
Baranowski, JM
Suski, T
Litwin-Staszewska, E
Bockowski, M
Grzegory, I
机构：
[1] Univ Paris 06, UMR CNRS 7601, Lab Opt Solides, F-75252 Paris 05, France
[2] Warsaw Univ, Inst Expt Phys, PL-00668 Warsaw, Poland
[3] Polish Acad Sci, UNIPRESS, PL-01142 Warsaw, Poland
来源：
PHYSICA B-CONDENSED MATTER | 2001年 / 308卷
关键词：
GaN; acceptors; hydrogen; oxygen;
D O I：
10.1016/S0921-4526(01)00711-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Several local vibrational modes (LVMs), observed in magnesium-doped high-pressure grown bulk samples, are attributed to two types of magnesium-oxygen complexes. The equivalent high-energy modes for beryllium-oxygen complexes are also observed in GaN:Be samples. Therefore, oxygen plays two roles for p-type doping of GaN: it compensates the acceptors and makes complexes with them. In addition to the well known LVM at 3125 cm(-1) resulting from the passivation of the magnesium acceptor by hydrogen, two new modes at 4090 and 4110 cm(-1) (at 6 K) are observed in as-grown OMVPE layers. We interpret them as originating from rotating hydrogen molecules in interstitial sites of the GaN lattice. Therefore, hydrogen passivates the acceptors and is also present in molecular form. (C) 2001 Elsevier Science B.V. All rights reserved.
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收藏
页码：117 / 121
页数：5
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