Flexural strength change of silicon nitride implanted by high dose titanium ions

被引：7
作者：
Zhang, JZ
Ye, XY
Chang, J
Tao, K
机构：
[1] CHINA CTR ADV SCI & TECHNOL,BEIJING 100080,PEOPLES R CHINA
[2] TSING HUA UNIV,DEPT MAT SCI & ENGN,BEIJING 100084,PEOPLES R CHINA
[3] TSING HUA UNIV,DEPT CHEM,BEIJING 100084,PEOPLES R CHINA
来源：
MATERIALS LETTERS | 1997年 / 30卷 / 04期
基金：
中国国家自然科学基金;
关键词：
silicon nitride; ion implantation; flexural strength;
D O I：
10.1016/S0167-577X(96)00212-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon nitride ceramics were modified by Ti-ion implantation in a MEVVA (MEtal Vapor Vacuum Are) implanter. The influence of implantation parameters was studied by varying the ion dose over a wide range. The samples were implanted with 80 keV Ti ions with doses from 1 x 10(17) to 3 x 10(18) Ti/cm(2) at temperatures between 400 and 750 degrees C. The implantation dose strongly influences the flexural strength and microhardness of silicon nitride, increasing the flexural strength up to 14% relative to unimplanted silicon nitride.
引用
收藏
页码：299 / 303
页数：5
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