ZnO-Nanowire-Based Extended-Gate Field-Effect-Transistor pH Sensors Prepared on Glass Substrate

被引：24

作者：

Chang, Sheng-Po ^{[1
,2
]}

Li, Chih-Wei ^{[1
,2
]}

Chen, Kuan-Jen ^{[3
]}

Chang, Shoou-Jinn ^{[1
,2
]}

Hsu, Cheng-Liang ^{[4
]}

Hsueh, Ting-Jen ^{[5
]}

Hsueh, Han-Ting ^{[5
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Instrument Dev Ctr, Tainan 701, Taiwan

[4] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

[5] Natl Nano Devices Labs, Tainan 741, Taiwan

来源：

SCIENCE OF ADVANCED MATERIALS | 2012年 / 4卷 / 11期

关键词：

ZnO; Nanowire; EGFET; pH; NANORODS; NITRIDE;

D O I：

10.1166/sam.2012.1410

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The sensing membrane of a extended-gate field-effect-transistor (EGFET) pH sensor, consisting of a zinc oxide (ZnO) thin film and a ZnO nanowire array, was fabricated using the Vapor-liquid-solid method. The EGFET PH sensor with ZnO nanowire array exhibited significantly improved sensing performance owing to a large sensing surface-to-volume ratio. The measured current and voltage sensitivities of the pH sensor were 48.6 mu A/pH and 36.9 mV/pH, respectively, at pH values ranging from 4 to 10.

引用

页码：1174 / 1178

页数：5

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