ZnO-Nanowire-Based Extended-Gate Field-Effect-Transistor pH Sensors Prepared on Glass Substrate

被引:24
作者
Chang, Sheng-Po [1 ,2 ]
Li, Chih-Wei [1 ,2 ]
Chen, Kuan-Jen [3 ]
Chang, Shoou-Jinn [1 ,2 ]
Hsu, Cheng-Liang [4 ]
Hsueh, Ting-Jen [5 ]
Hsueh, Han-Ting [5 ]
机构
[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Dept Elect Engn, Tainan 70101, Taiwan
[3] Natl Cheng Kung Univ, Instrument Dev Ctr, Tainan 701, Taiwan
[4] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan
[5] Natl Nano Devices Labs, Tainan 741, Taiwan
关键词
ZnO; Nanowire; EGFET; pH; NANORODS; NITRIDE;
D O I
10.1166/sam.2012.1410
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The sensing membrane of a extended-gate field-effect-transistor (EGFET) pH sensor, consisting of a zinc oxide (ZnO) thin film and a ZnO nanowire array, was fabricated using the Vapor-liquid-solid method. The EGFET PH sensor with ZnO nanowire array exhibited significantly improved sensing performance owing to a large sensing surface-to-volume ratio. The measured current and voltage sensitivities of the pH sensor were 48.6 mu A/pH and 36.9 mV/pH, respectively, at pH values ranging from 4 to 10.
引用
收藏
页码:1174 / 1178
页数:5
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