SPIN-ON DOPING (SOD) AND DIFFUSION TEMPERATURE EFFECT ON RECOMBINATIONS/IDEALITY FACTOR FOR SOLAR CELL APPLICATIONS

被引:0
作者
Ali, Khuram [1 ]
Khan, Sohail Aziz [1 ]
Jafri, Mohd Zubir Mat [1 ]
机构
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia
来源
CHALCOGENIDE LETTERS | 2012年 / 9卷 / 11期
关键词
Ideality factor; Diffusion temperature; Spin-on doping; re-combinations; Solar cells;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diffusion process on different temperatures and related effects on ideality factor (eta) and recombinations in solar cell have been investigated. Phosphorus-doped n+-emitters were fabricated by applying Spin-on doping (SOD). Dark current-voltage characterization has been used to investigate different recombinations and their relation with the ideality factor. Dark IV characteristics also revealed different current saturation limits at different diffusion furnace temperatures. Effect of doping temperature on sheet resistance helped to get optimized value at 950 degrees C to reduce carrier recombination and emitter recombination velocity in surface emitter layer. It was observed that there was strong dependency of sheet resistance over temperature in making n+-emitter layer of monocrystalline solar cells.
引用
收藏
页码:457 / 463
页数:7
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