Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC

被引：6
|
作者：
Hirano, Rii [1 ,2 ]
Sato, Yuki [3 ]
Tajima, Michio [1 ]
Itoh, Kohei M. [2 ]
Maeda, Koji [3 ]
机构：
[1] Japan Aerosp Explorat Agcy, Inst Space & Astronaut Sci, Chuo Ku, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 2525210, Japan
[2] Keio Univ, Sch Fundamental Sci & Technol, Yokohama, Kanagawa 2238522, Japan
[3] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo, Tokyo 1138656, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
关键词：
4H-SiC; photoluminescence; radiation-enhanced dislocation glide; stacking faults; TEMPERATURE; PIN;
D O I：
10.4028/www.scientific.net/MSF.717-720.395
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated expansion velocities of Shockley stacking faults (SSFs) in 4H-silicon carbide under laser illumination using photoluminescence methods. The experiments showed that the velocity of SSF expansion or the glide velocity of SSF-bounding 30 degrees-Si(g) partial dislocations (PD) is superlinearly dependent on the excitation intensity. We estimated the sample temperature by analyzing the broadening of band-edge emission and concluded that the lattice heating by laser illumination is not the cause of the enhanced dislocation glide. The superlinear dependence can be accounted for by a photo-induced sign reversal of the effective formation energy of the SSF acting as the driving force of SSF expansion under the illumination.
引用
收藏
页码：395 / +
页数：2
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