Transmission electron microscopy investigations of defects in molecular beam epitaxy-grown oxide films

被引：3

作者：

Williams, EJ

Daridon, A

Arrouy, F

Perret, J

Jaccard, Y

Locquet, JP

Machler, E

Siegenthaler, H

Martinoli, P

Fischer, O

机构：

[1] UNIV GENEVA, DEPT PHYS MAT CONDENSEE, CH-1211 GENEVA, SWITZERLAND

[2] UNIV BERN, INST INORGAN CHEM, CH-3012 BERN, SWITZERLAND

[3] UNIV NEUCHATEL, INST PHYS, CH-2000 NEUCHATEL, SWITZERLAND

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1997年 / 251卷 / 1-2期

关键词：

transmission electron microscopy; defects; molecular beam epitaxy; oxide films;

D O I：

10.1016/S0925-8388(96)02760-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

With a view to increasing the superconductive transition temperature of thin films of La2CuO4 grown by molecular beam epitaxy, films were grown on substrates of lattice parameters such that the film-substrate misfit became small and tensile, or compressive. The microstructure of these films was investigated using transmission electron microscopy and qualitative correlations with physical properties suggested.

引用

页码：11 / 14

页数：4