Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors

被引：34

作者：

Fu, Richard ^{[1
]}

Pattison, James ^{[1
]}

机构：

[1] USA, Res Lab, Adelphi, MD 20783 USA

来源：

OPTICAL ENGINEERING | 2012年 / 51卷 / 10期

关键词：

atomic layer deposition; plasma enhanced atomic layer deposition; Al2O3; film; mercury cadmium telluride; ATOMIC LAYER DEPOSITION;

D O I：

10.1117/1.OE.51.10.104003

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Mercury cadmium telluride (HgCdTe) processing must be performed at a low temperature in order to reduce Hg depletion. To meet demand, low-temperature plasma enhanced atomic layer deposition (PE-ALD) is an emerging deposition technology for highly conformal thin films. We comparatively studied the effectiveness of low-temperature PE-ALD by measuring the ALD film roughness, thickness, and dielectric values. Conformal deposition was investigated through scanning electron microscopy images of the Al2O3 film deposited onto high aspect ratio features dry-etched into HgCdTe. PE-ALD demonstrated conformal coatings of trenches, pillars and holes in advanced HgCdTe infrared sensor architectures. (C) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [ DOI: 10.1117/1.OE.51.10.104003]

引用

页数：4

共 7 条

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