CPW-fed triple high rejection notched UWB and X-band antenna on silicon for imaging and wireless applications

被引：5

作者：

Sharma, Manish ^{[1
]}

Awasthi, Yogendra Kumar ^{[2
]}

Singh, Himanshu ^{[3
]}

机构：

[1] SGT Univ, Dept Elect & Commun Engn, Gurugram, India

[2] Manav Rachna Univ, Dept Elect & Commun Engn, Antenna Measurement & Fabricat Lab, Faridabad, India

[3] Univ Delhi, Dept Elect Sci, New Delhi, India

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 2019年 / 106卷 / 07期

关键词：

Silicon; high rejection; gain; radiation efficiency; fractional bandwidth; MONOPOLE ANTENNA; DESIGN; MICROSTRIP;

D O I：

10.1080/00207217.2019.1570553

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, compact coplanar waveguide feed antenna covering ultra-wideband and X-band signals (2.98-13.34 GHz) is presented. Antenna also offers triple-notched band elimination (Wireless Interoperability for Microwave Access: 3.40-3.95 GHz, Wireless Local Area Network: 4.50-6.34 GHz and Downlink Satellite System: 7.11-7.802 GHz) which is due to insertion of stub and etching of slots. Antenna is fabricated and characterised on silicon for imaging and wireless applications having a fractional bandwidth of 133%. The antenna offers gain, radiation efficiency and group delay between 3.26 and 8.00 dBi, 84% and 92% and <=+/- 1.0 ns, respectively, for the entire bandwidth. Isolation of antenna in face-to-face and side-to-side orientations is <-25 dB with very less distortion presented in the transmission and reception of the signal. The radiations emitted by the antenna are observed as a dipole-like pattern in E-plane and omnidirectional in H-plane.

引用

页码：945 / 959

页数：15

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