Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

被引：7

作者：

Aleshkin, V. Ya. ^{[1
]}

Afonenko, A. A. ^{[2
]}

Dikareva, N. V. ^{[3
]}

Dubinov, A. A. ^{[1
]}

Kudryavtsev, K. E. ^{[1
]}

Morozov, S. V. ^{[1
]}

Nekorkin, S. M. ^{[3
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] Belarusian State Univ, Minsk 220050, BELARUS

[3] Nizhnii Novgorod State Univ, Tech Phys Res Inst, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2013年 / 47卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

GaAs; Semiconductor Laser; Laser Structure; Waveguide Layer; Bulk GaAs;

D O I：

10.1134/S106378261311002X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm(2) at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

引用

页码：1475 / 1477

页数：3