Mechanism of charge transport in Si/Al2O3/Al structures

被引：6
作者：
Borisova, T. M. [1 ]
Castro, R. A. [1 ]
机构：
[1] Russian State Pedag Univ, St Petersburg 191186, Russia
来源：
15TH RUSSIAN YOUTH CONFERENCE ON PHYSICS AND ASTRONOMY (PHYSICA.SPB) | 2013年 / 461卷
关键词：
D O I：
10.1088/1742-6596/461/1/012017
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
The investigation of current - voltage characteristics of structures Si/Al2O3/Al on the basis of aluminium oxide layers obtained by a method atomic layer deposition is carried out. It is established, that the possible mechanism of charge transport in structure is the space charge limited currents. The charge carrier concentration (N-t), concentration of traps (n(0)) and electron mobility (mu) in Al2O3 layer are calculated.
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页数：5
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