Structural and improved electrical properties of rare earth (Sm, Tb and Ho) doped BiFe0.975Mn0.025O3 thin films

被引：7
作者：
Raghavan, C. M. [1 ]
Kim, J. W. [1 ]
Kim, S. S. [1 ]
机构：
[1] Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
来源：
JOURNAL OF ELECTROCERAMICS | 2013年 / 31卷 / 3-4期
基金：
新加坡国家研究基金会;
关键词：
Sol-gel processes; X-ray methods; Ferroelectric properties; Perovskites; RAMAN-SCATTERING; BIFEO3;
D O I：
10.1007/s10832-013-9797-9
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Pure BiFeO3 (BFO) and rare earth (RE) ion codoped (Bi0.9RE0.1)(Fe0.975Mn0.025)O-3 (RE=Sm, Tb and Ho, denoted by BSFM, BTFM and BHFM) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Formations of distorted rhombohedral perovskite structure for the thin films were confirmed by using an X-ray diffraction and a Raman scattering analysis. Microstructural features for the thin films were examined by using a scanning electron microscopic analysis. Among the thin films, the lowest leakage current density of 1.22x10(-6) A/cm(2) (at 100 kV/cm), large remnant polarization (2Pr) of 72.4 mu C/cm(2) and low coercive field (2E(c)) of 689 kV/cm (at 980 kV/cm) were measured for the BTFM thin film.
引用
收藏
页码：275 / 279
页数：5
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