A monolithic high-g SOI-MEMS accelerometer for measuring projectile launch and flight accelerations

被引：18

作者：

Davis, BS ^{[1
]}

Denison, T

Kuang, J

机构：

[1] USA, Res Lab, Aberdeen Proving Ground, MD 21005 USA

[2] Analog Devices Inc, Cambridge, MA 02139 USA

来源：

SHOCK AND VIBRATION | 2006年 / 13卷 / 02期

关键词：

accelerometer; acceleration; balloting; SOI; high-g; MEMS; IMU; telemetry; munition; flight test;

D O I：

10.1155/2006/793564

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

Analog Devices ( ADI) has designed and fabricated a monolithic high- g acceleration sensor ( ADXSTC3- HG) fabricated with the ADI silicon- on- insulator micro- electro- mechanical system ( SOI- MEMS) process. The SOI- MEMS sensor structure has a thickness of 10 um, allowing for the design of inertial sensors with excellent cross- axis rejection. The high- g accelerometer discussed in this paper was designed to measure in- plane acceleration to 10,000 g while subjected to 100,000 g in the orthogonal axes. These requirements were intended to meet Army munition applications. The monolithic sensor was packaged in an 8- pin leadless chip carrier ( LCC- 8) and was successfully demonstrated by the US Army Research Laboratory ( ARL) as part of an inertial measurement unit during an instrumented flight experiment of artillery projectiles launched at 15,000 g.

引用

页码：127 / 135

页数：9