Self-Replicating Twins in Nanowires

被引:12
作者
Yuan, Zaoshi [1 ,2 ,3 ]
Nakano, Aiichiro [1 ,2 ]
机构
[1] Univ So Calif, Dept Phys & Astron, Collaboratory Adv Comp & Simulat, Dept Chem Engn & Mat Sci, Los Angeles, CA 90089 USA
[2] Univ So Calif, Dept Comp Sci, Los Angeles, CA 90089 USA
[3] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
关键词
Nanowire; twin-twin interaction; surface strain; GaAs; molecular dynamics; TWINNING SUPERLATTICES; TRANSITION; EFFICIENCY; REDUCTION; STRENGTH; MOBILITY; BRITTLE; SILICON;
D O I
10.1021/nl402881v
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Based on molecular-dynamics simulations validated with quantum-mechanical calculations, we predict that (111) twin planes in a [111]-oriented GaAs nanowire attain attractive interactions mediated by surface strain. This gives rise to a self-replication mechanism that continuously generates a twin superlattice in a nanowire during growth. We demonstrate significant implications of the twin twin interaction for the electronic, mechanical, and chemical properties of nanowires. These unique properties suggest potential applications such as catalysts for solar fuel production and nanoscale mechanical dampers.
引用
收藏
页码:4925 / 4930
页数:6
相关论文
共 39 条
  • [1] An empirical potential approach to wurtzite-zinc-blende polytypism in group III-V semiconductor nanowires
    Akiyama, T
    Sano, K
    Nakamura, K
    Ito, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11): : L275 - L278
  • [2] Twinning superlattices in indium phosphide nanowires
    Algra, Rienk E.
    Verheijen, Marcel A.
    Borgstrom, Magnus T.
    Feiner, Lou-Fe
    Immink, George
    van Enckevort, Willem J. P.
    Vlieg, Elias
    Bakkers, Erik P. A. M.
    [J]. NATURE, 2008, 456 (7220) : 369 - 372
  • [3] THEORY OF SUPERCONDUCTIVITY
    BARDEEN, J
    COOPER, LN
    SCHRIEFFER, JR
    [J]. PHYSICAL REVIEW, 1957, 108 (05): : 1175 - 1204
  • [4] Behrens M, 2012, SCIENCE, V336, P893, DOI [10.1126/science.1219831, 10.1126/science.12198331]
  • [5] Direct observation of atomic scale surface relaxation in ortho twin structures in GaAs by XSTM
    Bolinsson, J.
    Ouattara, L.
    Hofer, W. A.
    Skold, N.
    Lundgren, E.
    Gustafsson, A.
    Mikkelsen, A.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (05)
  • [6] Caroff P, 2009, NAT NANOTECHNOL, V4, P50, DOI [10.1038/nnano.2008.359, 10.1038/NNANO.2008.359]
  • [7] Anelastic Behavior in GaAs Semiconductor Nanowires
    Chen, Bin
    Gao, Qiang
    Wang, Yanbo
    Liao, Xiaozhou
    Mai, Yiu-Wing
    Tan, Hark Hoe
    Zou, Jin
    Ringer, Simon P.
    Jagadish, Chennupati
    [J]. NANO LETTERS, 2013, 13 (07) : 3169 - 3172
  • [8] Embrittlement of Metal by Solute Segregation-Induced Amorphization
    Chen, Hsiu-Pin
    Kalia, Rajiv K.
    Kaxiras, Efthimios
    Lu, Gang
    Nakano, Aiichiro
    Nomura, Ken-ichi
    van Duin, Adri C. T.
    Vashishta, Priya
    Yuan, Zaoshi
    [J]. PHYSICAL REVIEW LETTERS, 2010, 104 (15)
  • [9] Twin-Free GaAs Nanosheets by Selective Area Growth: Implications for Defect-Free Nanostructures
    Chi, Chun-Yung
    Chang, Chia-Chi
    Hu, Shu
    Yeh, Ting-Wei
    Cronin, Stephen B.
    Dapkus, P. Daniel
    [J]. NANO LETTERS, 2013, 13 (06) : 2506 - 2515
  • [10] Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species
    Cui, Y
    Wei, QQ
    Park, HK
    Lieber, CM
    [J]. SCIENCE, 2001, 293 (5533) : 1289 - 1292