Effects of MnO2 doping in V2O5-doped ZnO varistor system

被引：64
|
作者：
Hng, HH [1 ]
Chan, PL [1 ]
机构：
[1] Nanyang Technol Univ, Sch Mat Engn, Div Mat Sci, Singapore 639798, Singapore
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2002年 / 75卷 / 1-3期
关键词：
V(2)Q(5)-doped ZnO varistors; MnO2; nonlinear coefficient;
D O I：
10.1016/S0254-0584(02)00031-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of the amount of MnO2 (0.5-2 mol%) on the microstructure and the electrical properties have been studied in a binary ZnO-0.5mol% V2O5 system. The microstructure of the samples consists mainly of ZnO grains with gamma-Zn-3(VO4)(2) as the minority secondary phase. The cumulative addition of MnO2 improves the varistor performance by increasing the nonlinear coefficient alpha. The alpha-value is found to increase with the amount of MnO2 and a hi-hest value of 31.8 is obtained for the sample doped with 2 mol% MnO2. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：61 / 66
页数：6
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