Undoped and doped FeSi or how to make a heavy fermion metal with three of the most common elements

被引:15
作者
Aeppli, G
DiTusa, JF
机构
[1] NEC Res Inst, Princeton, NJ 08540 USA
[2] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 63卷 / 1-2期
关键词
doped FeSi; heavy fermion metal; common elements;
D O I
10.1016/S0921-5107(99)00061-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We review electrical conductivity, magnetic susceptibility and optical data on the Kondo insulator FeSi and its chemically doped metallic derivatives. While at T = 0, FeSi appears in many respects to be a conventional band insulator, its temperature-dependent behavior cannot be explained in terms of ordinary band theory. Doping with Al yields a transition from the Kondo insulator to a heavy fermion metal. The transition maps quantitatively onto that observed for Si:P, with the exception of a strongly renormalized effective carrier mass and critical concentration. We conclude that one of the simplest ways to make a heavy fermion metal is to dope a Kondo insulator. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:119 / 124
页数:6
相关论文
共 19 条
[1]  
AEPPLI G, 1994, P WORKSH STRONGL CON
[2]  
Aeppli G., 1992, Comments Condens. Matter Phys., V16, P155
[3]   LONG PERIOD HELIMAGNETISM IN THE CUBIC-B20 FEXCO1-XSI AND COXMN1-XSI ALLOYS [J].
BEILLE, J ;
VOIRON, J ;
ROTH, M .
SOLID STATE COMMUNICATIONS, 1983, 47 (05) :399-402
[4]   ELECTRICAL PROPERTIES OF HEAVILY DOPED SILICON [J].
CHAPMAN, PW ;
TUFTE, ON ;
ZOOK, JD ;
LONG, D .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) :3291-&
[5]   Heavy fermion metal Kondo insulator transition in FeSi1-xAlx [J].
DiTusa, JF ;
Friemelt, K ;
Bucher, E ;
Aeppli, G ;
Ramirez, AP .
PHYSICAL REVIEW B, 1998, 58 (16) :10288-10301
[6]   Metal-insulator transitions in the kondo insulator FeSi and classic semiconductors are similar [J].
DiTusa, JF ;
Friemelt, K ;
Bucher, E ;
Aeppli, G ;
Ramirez, AP .
PHYSICAL REVIEW LETTERS, 1997, 78 (14) :2831-2834
[7]   CRITICAL-BEHAVIOR OF THE HALL CONDUCTIVITY AT THE METAL-INSULATOR-TRANSITION [J].
FIELD, SB ;
ROSENBAUM, TF .
PHYSICAL REVIEW LETTERS, 1985, 55 (05) :522-524
[8]  
FOEX G, 1938, J PHYS RADIUM, V9, P37
[9]   ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF FESI, A STRONGLY CORRELATED INSULATOR [J].
FU, C ;
KRIJN, MPCM ;
DONIACH, S .
PHYSICAL REVIEW B, 1994, 49 (03) :2219-2222
[10]   PARAMAGNETIC EXCITED STATE OF FESI [J].
JACCARINO, V ;
WERTHEIM, GK ;
WERNICK, JH ;
WALKER, LR ;
ARAJS, S .
PHYSICAL REVIEW, 1967, 160 (03) :476-+