Narrowband ultraviolet field-emission device using Gd-doped AlN

被引：11

作者：

Kitayama, Shinya ^{[1
]}

Kita, Takashi ^{[1
]}

Kawamura, Masashi ^{[1
]}

Wada, Osamu ^{[1
]}

Chigi, Yoshitaka ^{[2
]}

Kasai, Yoshihiro ^{[2
]}

Nishimoto, Tetsuro ^{[2
]}

Tanaka, Hiroyuki ^{[2
]}

Kobayashi, Mikihiro ^{[2
]}

机构：

[1] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Nada Ku, Rokkodai 1-1, Kobe, Hyogo 6578501, Japan

[2] YUMEX INC, Hyogo 6712114, Japan

来源：

IUMRS-ICA 2008 SYMPOSIUM AA. RARE-EARTH RELATED MATERIAL PROCESSING AND FUNCTIONS | 2008年 / 1卷

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1088/1757-8981/1/1/012001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We developed mercury-free narrow-band deep-ultraviolet luminescence devices which were accomplished by performing field-emission excitation of Al1-xGdxN. The narrow band emission is a typical feature of the intra-orbital electron transition in the rare-earth Gd3+ ions. AlN, GdN and Al1-xGdxN thin films were grown on fused silica substrates by using the reactive sputtering technique. A resolution limited, narrow band luminescence line from Gd3+ ions has been observed around 315 nm. Detailed luminescence characteristics depending on the GdN mole fraction and the growth temperature have been investigated.

引用

页数：8

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