3-D Simulator of Laser Crystallization for Polycrystalline-Silicon Thin-Film Transistors

被引：2

作者：

Matsuki, Kuniaki ^{[1
]}

Kimura, Mutsumi ^{[1
,2
]}

Ishihara, Ryoichi ^{[3
]}

机构：

[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan

[2] Ryukoku Univ, Joint Res Ctr Sci & Technol, Otsu, Shiga 5202194, Japan

[3] Delft Univ Technol, Delft Inst Microelect & Submicrontechnol, NL-2600 GB Delft, Netherlands

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2012年 / 25卷 / 04期

关键词：

3-D simulator; laser crystallization; polycrystalline-silicon (poly-Si); thin-film transistor (TFT); MU-CZOCHRALSKI PROCESS; EXCIMER-LASER; EXPLOSIVE CRYSTALLIZATION; LATERAL-CRYSTALLIZATION; PULSE DURATION; CAPPING LAYER; AMORPHOUS-SI; GROWTH; FIELD; TFTS;

D O I：

10.1109/TSM.2012.2205593

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A 3-D simulator of laser crystallization for polycrystalline-silicon thin-film transistors has been developed. Random nucleation, crystal growth velocity, latent heat emission, and partial crystallization are modeled, and a 2-D algorithm is extended to a 3-D algorithm. The mu-Czochralski technique is analyzed using the 3-D simulator, and it is found that the grain size becomes large when the initial temperature is high after the laser irradiation.

引用

页码：650 / 656

页数：7

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