Synthesis, optoelectronic properties and photoelectrochemical performance of CdS thin films

被引：21

作者：

Chate, P. A. ^{[1
]}

Patil, S. S. ^{[1
]}

Patil, J. S. ^{[1
]}

Sathe, D. J. ^{[2
]}

Hankare, P. P. ^{[3
]}

机构：

[1] JSM Coll, Dept Chem, Alibag, MS, India

[2] KIT Engn Coll, Dept Chem, Kolhapur, Maharashtra, India

[3] Shivaji Univ, Dept Chem, Kolhapur 416004, Maharashtra, India

来源：

PHYSICA B-CONDENSED MATTER | 2013年 / 411卷

关键词：

Chalcogenides; Thin films; Crystal growth; Electrical properties; CHEMICAL BATH DEPOSITION; IONIC LAYER ADSORPTION;

D O I：

10.1016/j.physb.2012.11.032

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Cadmium sulphide thin films were deposited by the chemical method using oxalic acid as chelating agent. Solution temperature and deposition time were optimised for depositing good quality of films. The structural, optical, electrical and photoelectrochemical properties of samples were studied. From the optical absorption data, an energy gap equal to 2.60 eV was found. The efficiency of photo-electrode was found to be 1.0% using sulphide-polysulphide electrolyte. (c) 2012 Elsevier B.V. All rights reserved.

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收藏

页码：118 / 121

页数：4

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