Influence of Nonmetallic Interstitials on the Phase Transformation between FCC and HCP Titanium: A Density Functional Theory Study

被引:3
|
作者
Yang, Mengmeng [1 ]
Hu, Jianan [1 ]
Cao, Shuo [2 ]
Feng, Guang [3 ]
Yang, Yi [1 ]
Liu, Renci [2 ]
Li, Shujun [2 ]
Zhao, Fu [3 ]
Feng, Aihan [4 ]
Hu, Qingmiao [2 ]
Huang, Aijun [5 ]
Wang, Hao [1 ]
机构
[1] Univ Shanghai Sci & Technol, Interdisciplinary Ctr Addit Mfg ICAM, Sch Mat & Chem, Shanghai 200093, Peoples R China
[2] Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
[3] Southern Univ Sci & Technol, Acad Adv Interdisciplinary Studies, Shenzhen 518055, Peoples R China
[4] Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China
[5] Monash Univ, Monash Ctr Addit Mfg MCAM, Notting Hill, Vic 3168, Australia
基金
中国国家自然科学基金;
关键词
titanium; interstitial; FCC phase; first-principles; CENTERED-CUBIC TITANIUM; STACKING-FAULT-ENERGY; SITU TEM OBSERVATION; AB-INITIO; IN-SITU; FORMATION MECHANISM; TI; DEFORMATION; ATOMS; ALLOY;
D O I
10.3390/met12101607
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In addition to the common stable and metastable phases in titanium alloys, the face-centered cubic phase was recently observed under various conditions; however, its formation remains largely unclarified. In this work, the effect of nonmetallic interstitial atoms O, N, C and B on the formation of the face-centered cubic phase of titanium was investigated with the density functional theory. The results indicate that the occupancy of O, N, C and B on the octahedral interstitial sites reduces the energy gap between the hexagonal-close-packed (HCP) and face-centered cubic (FCC) phases, thus assisting the formation of FCC-Ti under elevated temperature or plastic deformation. Such a gap further decreases with the increase in the interstitial content, which is consistent with the experimental observation of FCC-Ti under high interstitial content. The relative stability of the interstitial-containing HCP-Ti and FCC-Ti was studied against the physical and chemical origins, e.g., the lattice distortion and the electronic bonding. Interstitial O, N, C and B also reduce the stacking fault energy, thus further benefiting the formation of FCC-Ti.
引用
收藏
页数:12
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