Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits

被引：108

作者：

Crippa, Alessandro ^{[1
,2
]}

Maurand, Romain ^{[1
,2
]}

Bourdet, Leo ^{[1
,3
]}

Kotekar-Patil, Dharmraj ^{[1
,2
]}

Amisse, Anthony ^{[1
,2
]}

Jehl, Xavier ^{[1
,2
]}

Sanquer, Marc ^{[1
,2
]}

Lavieville, Romain ^{[1
,4
]}

Bohuslavskyi, Heorhii ^{[1
,2
,4
]}

Hutin, Louis ^{[1
,4
]}

Barraud, Sylvain ^{[1
,4
]}

Vinet, Maud ^{[1
,4
]}

Niquet, Yann-Michel ^{[1
,3
]}

De Franceschi, Silvano ^{[1
,2
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CEA, INAC, PHELIQS, F-38000 Grenoble, France

[3] CEA, INAC, MEM, F-38000 Grenoble, France

[4] CEA, LETI, MINATEC Campus, F-38000 Grenoble, France

来源：

PHYSICAL REVIEW LETTERS | 2018年 / 120卷 / 13期

基金：

欧洲研究理事会; 欧盟地平线“2020”;

关键词：

DOUBLE-QUANTUM DOT; SILICON; NANOWIRE; FIDELITY;

D O I：

10.1103/PhysRevLett.120.137702

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency, as well as the gate-voltage dependence and anisotropy of the hole g factor. We show that a g-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the g factor, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.

引用

页数：5

共 35 条

[1] SiGe quantum dots for fast hole spin Rabi oscillations [J].