An infrared-bi-color Schottky-barrier CCD image sensor for precise thermal images

被引：4

作者：

Konuma, K

Asano, Y

Masubuchi, K

Utsumi, H

Tohyama, S

Endo, T

Azuma, H

Teranishi, N

机构：

[1] Sensor Research Laboratory, Microelectronics Research Laboratories, NEC Corporation, Kanagawa

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 02期

关键词：

D O I：

10.1109/16.481729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An infrared-bi-color image sensor was developed with a barrier height controlled Schottky-barrier photo diode array for precise temperature images. Low and high barrier height diode pixels are arranged vertically next to one another using a selective area ion implantation technique. Conventional monochrome infrared image sensor frequently give wrong temperature images due to unreasonable emmissivity assumption. The infrared-bi-color image sensor can obtain the temperature image precisely with regard to the emissivity of the object.

引用

页码：282 / 286

页数：5

共 6 条

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