The Effect of Neutron Irradiation on the Electrical Characteristics of Silicon Carbide DMOSFETs

被引：2

作者：

Lee, Taeseop ^{[1
]}

Kim, Sung-Su ^{[1
]}

Kang, Min-Seok ^{[1
]}

Koo, Sang-Mo ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

Neutron Irradiation; Silicon Carbide; DMOSFET; Barrier Height; Thermionic Emission; MOS OXIDES; RADIATION; TECHNOLOGIES; DEVICES;

D O I：

10.1166/jnn.2016.13676

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The effects of neutron irradiation on the performance of n-channel 4H-SiC DMOSFETs were investigated. The gate oxide of the 4H-SiC DMOSFETs was fabricated using dry oxidation process. The electrical characteristics of the DMOSFETs were measured at the various temperature, ranging from 300 to 500 K. Oxide trapped charges and interface traps produced in the DMOSFETs by the neutron irradiation are evaluated from changes in the current-voltage curves. It is found that the net numbers of radiation-induced oxide trapped charges and interface traps depend on the oxidation process. From a comparison of radiation response between 4H-SiC MOSFETs before and after the neutron irradiation are demonstrated to have higher radiation resistance.

引用

页码：12754 / 12757

页数：4

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