Ferromagnetic Cu doped ZnO as an electron injector in heterojunction light emitting diodes

被引：36

作者：

Herng, T. S. ^{[1
]}

Lau, S. P. ^{[1
]}

Yu, S. F. ^{[1
]}

Tsang, S. H. ^{[1
]}

Teng, K. S. ^{[2
]}

Chen, J. S. ^{[3
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Univ Wales Swansea, Sch Engn, Multidisciplinary Nanotechnol Ctr, Swansea SA2 8PP, W Glam, Wales

[3] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 119260, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 10期

关键词：

copper; electrical resistivity; electroluminescence; electron density; ferromagnetic materials; gallium compounds; III-V semiconductors; II-VI semiconductors; light emitting diodes; magnetic thin films; magnetisation; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; vacuum arcs; vacuum deposited coatings; vacuum deposition; wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3021142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferromagnetic and highly conductive copper doped ZnO (ZnO:Cu) films were prepared by filtered cathodic vacuum arc technique. By employing a biasing technique during growth, the electron concentration and resistivity of the ZnO:Cu films can be as high as 10(20) cm(-3) and 5.2x10(-3) Omega cm, respectively. The ferromagnetic behavior is observed in all the conductive films, but its magnetization is quenched with an increment in carrier concentration, suggesting that carrier induced exchange is not directly responsible for the ferromagnetism. Heterojunction light emitting diodes have been fabricated using the conductive ZnO:Cu layer as an electron injector and a p-type GaN as hole injector. Electroluminescence can be detected from the devices.

引用

页数：6

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